1 oct-20-1997 bsm 25 gd 120 dn2 igbt power module ? power module ? 3-phase full-bridge ? including fast free-wheel diodes ? package with insulated metal base plate type v ce i c package ordering code bsm 25 gd 120 dn2 1200 v 35 a econopack 2 c67076-a2505-a67 bsm 25 gd120dn2e3224 1200 v 35 a econopack 2k c67070-a2505-a67 maximum ratings parameter symbol values unit collector-emitter voltage v ce 1200 v collector-gate voltage r ge = 20 k w v cgr 1200 gate-emitter voltage v ge 20 dc collector current t c = 25 c t c = 80 c i c 25 35 a pulsed collector current, t p = 1 ms t c = 25 c t c = 80 c i cpuls 50 70 power dissipation per igbt t c = 25 c p to t 200 w chip temperature t j + 150 c storage temperature t stg -40 ... + 125 thermal resistance, chip case r thjc 0.6 k/w diode thermal resistance, chip case r thjc d 1 insulation test voltage, t = 1min. v is 2500 vac creepage distance - 16 mm clearance - 11 din humidity category, din 40 040 - f sec iec climatic category, din iec 68-1 - 40 / 125 / 56
2 oct-20-1997 bsm 25 gd 120 dn2 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. static characteristics gate threshold voltage v ge = v ce, i c = 1 ma v ge(th) 4.5 5.5 6.5 v collector-emitter saturation voltage v ge = 15 v, i c = 25 a, t j = 25 c v ge = 15 v, i c = 25 a, t j = 125 c v ce(sat) - - 3.1 2.5 3.7 3 zero gate voltage collector current v ce = 1200 v, v ge = 0 v, t j = 25 c v ce = 1200 v, v ge = 0 v, t j = 125 c i ces - - 2 0.5 - 0.8 ma gate-emitter leakage current v ge = 20 v, v ce = 0 v i ges - - 180 na ac characteristics transconductance v ce = 20 v, i c = 25 a g fs 10 - - s input capacitance v ce = 25 v, v ge = 0 v, f = 1 mhz c iss - 1650 - pf output capacitance v ce = 25 v, v ge = 0 v, f = 1 mhz c oss - 250 - reverse transfer capacitance v ce = 25 v, v ge = 0 v, f = 1 mhz c rss - 110 -
3 oct-20-1997 bsm 25 gd 120 dn2 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. switching characteristics, inductive load at t j = 125 c turn-on delay time v cc = 600 v, v ge = 15 v, i c = 25 a r gon = 47 w t d(on) - 75 150 ns rise time v cc = 600 v, v ge = 15 v, i c = 25 a r gon = 47 w t r - 65 130 turn-off delay time v cc = 600 v, v ge = -15 v, i c = 25 a r goff = 47 w t d(off) - 400 600 fall time v cc = 600 v, v ge = -15 v, i c = 25 a r goff = 47 w t f - 50 100 free-wheel diode diode forward voltage i f = 25 a, v ge = 0 v, t j = 25 c i f = 25 a, v ge = 0 v, t j = 125 c v f - - 1.8 2.3 - 2.8 v reverse recovery time i f = 25 a, v r = -600 v, v ge = 0 v d i f / dt = -800 a/s, t j = 125 c t rr - 0.13 - s reverse recovery charge i f = 25 a, v r = -600 v, v ge = 0 v d i f / dt = -800 a/s t j = 25 c t j = 125 c q rr - - 6 2.3 - - c
4 oct-20-1997 bsm 25 gd 120 dn2 power dissipation p tot = | ( t c ) parameter: t j 150 c 0 20 40 60 80 100 120 c 160 t c 0 20 40 60 80 100 120 140 160 180 w 220 p tot safe operating area i c = | ( v ce ) parameter: d = 0 , t c = 25 c , t j 150 c -1 10 0 10 1 10 2 10 a i c 10 0 10 1 10 2 10 3 v v ce dc 10 ms 1 ms 100 s t p = 11.0 s collector current i c = | ( t c ) parameter: v ge 3 15 v , t j 150 c 0 20 40 60 80 100 120 c 160 t c 0 4 8 12 16 20 24 28 32 a 40 i c transient thermal impedance igbt z th jc = | ( t p ) parameter: d = t p / t -3 10 -2 10 -1 10 0 10 k/w z thjc 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 s t p single pulse 0.01 0.02 0.05 0.10 0.20 d = 0.50
5 oct-20-1997 bsm 25 gd 120 dn2 typ. output characteristics i c = f (v ce ) parameter: t p = 80 s, t j = 25 c 0 1 2 3 v 5 v ce 0 5 10 15 20 25 30 35 40 a 50 i c 17v 15v 13v 11v 9v 7v typ. output characteristics i c = f (v ce ) parameter: t p = 80 s, t j = 125 c 0 1 2 3 v 5 v ce 0 5 10 15 20 25 30 35 40 a 50 i c 17v 15v 13v 11v 9v 7v typ. transfer characteristics i c = f (v ge ) parameter: t p = 80 s, v ce = 20 v 0 2 4 6 8 10 v 14 v ge 0 5 10 15 20 25 30 35 40 a 50 i c
6 oct-20-1997 bsm 25 gd 120 dn2 typ. gate charge v ge = | ( q gate ) parameter: i c puls = 25 a 0 20 40 60 80 100 120 140 nc 170 q gate 0 2 4 6 8 10 12 14 16 v 20 v ge 800 v 600 v typ. capacitances c = f ( v ce ) parameter: v ge = 0 v, f = 1 mhz 0 5 10 15 20 25 30 v 40 v ce -2 10 -1 10 0 10 1 10 nf c ciss coss crss reverse biased safe operating area i cpuls = f(v ce ) , t j = 150c parameter: v ge = 15 v 0 200 400 600 800 1000 1200 v 1600 v ce 0.0 0.5 1.0 1.5 2.5 i cpuls / i c short circuit safe operating area i csc = f(v ce ) , t j = 150c parameter: v ge = 15 v, t sc 10 s, l < 50 nh 0 200 400 600 800 1000 1200 v 1600 v ce 0 2 4 6 8 12 i csc / i c
7 oct-20-1997 bsm 25 gd 120 dn2 typ. switching time i = f (i c ) , inductive load , t j = 125c par.: v ce = 600 v, v ge = 15 v, r g = 47 w 0 10 20 30 40 a 60 i c 1 10 2 10 3 10 ns t tdon tr tdoff tf typ. switching time t = f (r g ) , inductive load , t j = 125c par.: v ce = 600 v, v ge = 15 v, i c = 25 a 0 20 40 60 80 100 120 140 w 180 r g 1 10 2 10 3 10 ns t tdon tr tdoff tf typ. switching losses e = f (i c ) , inductive load , t j = 125c par.: v ce = 600 v, v ge = 15 v, r g = 47 w 0 10 20 30 40 a 60 i c 0 1 2 3 4 5 6 7 8 mws 10 e eon eoff typ. switching losses e = f (r g ) , inductive load , t j = 125c par.: v ce = 600v, v ge = 15 v, i c = 25 a 0 20 40 60 80 100 120 140 w 180 r g 0 1 2 3 4 5 6 7 8 mws 10 e eon eoff
8 oct-20-1997 bsm 25 gd 120 dn2 forward characteristics of fast recovery reverse diode i f = f(v f ) parameter: t j 0.0 0.5 1.0 1.5 2.0 v 3.0 v f 0 5 10 15 20 25 30 35 40 a 50 i f t j =25c =125c j t transient thermal impedance diode z th jc = | ( t p ) parameter: d = t p / t -3 10 -2 10 -1 10 0 10 1 10 k/w z thjc 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 s t p single pulse 0.01 0.02 0.05 0.10 0.20 d = 0.50
9 oct-20-1997 bsm 25 gd 120 dn2 circuit diagram package outlines dimensions in mm weight: 180 g
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